 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AW GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a plastic envelope, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 4.5 0.7 MAX. 1500 700 8 15 125 1.0 UNIT V V A A W V A s Tmb 25 C IC = 4.5 A; IB = 1.6 A f = 16 kHz ICsat = 4.5 A; f = 16kHz PINNING - SOT429 PIN 1 2 3 tab base collector emitter collector DESCRIPTION PIN CONFIGURATION SYMBOL c b 1 2 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 700 8 15 4 6 125 150 150 UNIT V V A A A A W C C Tmb 25 C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient CONDITIONS in free air TYP. 45 MAX. 1.0 UNIT K/W K/W July 1998 1 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AW STATIC CHARACTERISTICS Tmb = 25 C unless otherwise specified SYMBOL ICES ICES IEBO VCEOsus VCEsat VBEsat hFE PARAMETER Collector cut-off current 1 CONDITIONS MIN. 700 6 TYP. 13 MAX. 1.0 2.0 10 1.0 1.1 30 UNIT mA mA mA V V V VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C Emitter cut-off current VEB = 6.0 V; IC = 0 A Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; L = 25 mH Collector-emitter saturation voltages IC = 4.5 A; IB = 1.6 A Base-emitter saturation voltage IC = 4.5 A; IB = 2.0 A DC current gain IC = 100 mA; VCE = 5 V DYNAMIC CHARACTERISTICS Tmb = 25 C unless otherwise specified SYMBOL fT CC PARAMETER Transition frequency at f = 5 MHz Collector capacitance at f = 1MHz Switching times (16 kHz line deflection circuit) Turn-off storage time Turn-off fall time CONDITIONS IC = 0.1 A;VCE = 5 V VCB = 10 V ICsat = 4.5 A;Lc= 1 mH;Cfb = 4 nF IB(end) = 1.4 A; LB = 6 H; -VBB = -4 V; TYP. 7 125 MAX. UNIT MHz pF s s ts tf 6.5 0.7 - IC / mA + 50v 100-200R 250 Horizontal Oscilloscope Vertical 100R 6V 30-60 Hz 1R 200 100 0 VCE / V min VCEOsust Fig.1. Test circuit for VCEOsust. Fig.2. Oscilloscope display for VCEOsust. 1 Measured with half sine-wave voltage (curve tracer). July 1998 2 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AW TRANSISTOR IC DIODE ICsat 100 h FE BU508AD t IB IBend t 20us 26us 64us 10 VCE t 1 0.1 1 IC/A 10 Fig.3. Switching times waveforms. Fig.6. Typical DC current gain. hFE = f (IC) parameter VCE BU508AD ICsat 90 % IC 1 0.9 0.8 0.7 VCESAT / V 10 % tf ts IB IBend 0.6 t 0.5 0.4 0.3 t 0.2 0.1 0 - IBM 0.1 1 IC / A 10 Fig.4. Switching times definitions. Fig.7. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB BU508AD + 150 v nominal adjust for ICsat 1.4 VBESAT / V 1.2 1mH IC = 6A 1 IC = 4.5A IBend LB D.U.T. 12nF BY228 0.8 IC = 3A -VBB 0.6 0 1 2 3 IB / A 4 Fig.5. Switching times test circuit. Fig.8. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC July 1998 3 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AW VCESAT/V 10 BU508AD 120 110 100 90 80 70 PD% Normalised Power Derating with heatsink compound 1 IC = 6A 60 50 40 30 20 IC = 4.5A IC = 3A 10 0 0 10 0.1 0.1 20 40 60 1 IB/A 80 Ths / C 100 120 140 Fig.9. Typical collector-emitter saturation voltage. VCEsat = f (IB); parameter IC Fig.11. Normalised power dissipation. PD% = 100PD/PD 25C = f (Ths) 10 Zth K/W BU508AW 1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0 P D tp t D= p T T 0.001 1.0E-07 1.0E-5 t/s 1.0E-3 1.0E-1 t 1.0E+1 Fig.10. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T Fig.12. Forward bias safe operating area. Tmb < 25C (1) Ptot max line. (2) Second-breakdown limit (independent of temperature). I Region of permissible DC operation. II Permissible extension for repetitive operation. July 1998 4 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AW MECHANICAL DATA Dimensions in mm Net Mass: 5 g 5.3 3.5 21 max 15.5 max seating plane 7.3 16 max 5.3 max 1.8 o 3.5 max 2.5 4.0 max 1 2.2 max 3.2 max 5.45 2 3 0.9 max 1.1 5.45 0.4 M 15.5 min Fig.13. SOT429; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT429 envelope. 2. Epoxy meets UL94 V0 at 1/8". July 1998 5 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AW DEFINITIONS Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. July 1998 6 Rev 1.200 |
Price & Availability of BU508AW
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |